HIGH-POWER PHASE-LOCKED ARRAYS OF INDEX-GUIDED DIODE-LASERS

被引：111
作者：
BOTEZ, D
CONNOLLY, JC
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 12期
关键词：
D O I：
10.1063/1.94239
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1096 / 1098
页数：3
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共 25 条
[1]   HIGH-POWER MULTIPLE-STRIPE INJECTION-LASERS WITH CHANNEL GUIDES [J].
ACKLEY, DE .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (11) :1910-1917
[2]   HIGH-POWER LEAKY-MODE MULTIPLE-STRIPE LASER [J].
ACKLEY, DE ;
ENGELMANN, RWH .
APPLIED PHYSICS LETTERS, 1981, 39 (01) :27-29
[3]   SINGLE LONGITUDINAL MODE-OPERATION OF HIGH-POWER MULTIPLE-STRIPE INJECTION-LASERS [J].
ACKLEY, DE .
APPLIED PHYSICS LETTERS, 1983, 42 (02) :152-154
[4]   TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE [J].
AIKI, K ;
NAKAMURA, M ;
KURODA, T ;
UMEDA, J ;
ITO, R ;
CHINONE, N ;
MAEDA, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) :89-94
[5]   VAPOR-PHASE TRANSPORT OF GAAS ON A V-SHAPE GROOVED GAAS SUBSTRATE [J].
AYABE, M ;
NAGASAWA, H ;
KANEKO, K .
JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :180-184
[6]  
BORN M, 1970, PRINCIPLES OPTICS
[7]   CW HIGH-POWER SINGLE-MODE OPERATION OF CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS LASERS WITH A LARGE OPTICAL CAVITY [J].
BOTEZ, D .
APPLIED PHYSICS LETTERS, 1980, 36 (03) :190-192
[8]   GROWTH-CHARACTERISTICS OF GAAS-GA1-XALXAS STRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY OVER PREFERENTIALLY ETCHED CHANNELS [J].
BOTEZ, D ;
TSANG, WT ;
WANG, S .
APPLIED PHYSICS LETTERS, 1976, 28 (04) :234-237
[9]  
BOTEZ D, 1981, J QUANTUM ELECTRON, V17, P2290
[10]   NEAR-FIELD AND BEAM-WAIST POSITION OF THE SEMICONDUCTOR-LASER WITH A CHANNELED-SUBSTRATE PLANAR STRUCTURE [J].
CHEN, CY ;
WANG, S .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :257-260
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