ON THE INVESTIGATION OF LASER-INDUCED CARRIERS IN SILICON IN THE PICOSECOND TIME RANGE

被引：8

作者：

BERGNER, H

BRUCKNER, V

机构：

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1983年 / 15卷 / 06期

关键词：

D O I：

10.1007/BF00620016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：477 / 485

页数：9

共 11 条

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AUSTON, DH ;

SHANK, CV .

PHYSICAL REVIEW LETTERS, 1974, 32 (20) :1120-1123

[2]

Bergner H., 1983, Wissenschaftliche Zeitschrift der Friedrich-Schiller-Universitaet Jena, Mathematisch-Naturwissenschaftliche Reihe, V32, P113

[3] SPATIALLY INHOMOGENEOUS CARRIER CONCENTRATION-DEPENDENCE OF THE REFLECTIVITY OF SEMICONDUCTORS [J].

BERGNER, H ;

BRUCKNER, V ;

SCHRODER, B .

OPTICAL AND QUANTUM ELECTRONICS, 1982, 14 (03) :245-251

[4]

BERGNER H, UNPUB

[5]

BERGNER H, 1982, EXP TECHNIK PHYSIK, V30, P407

[6]

BONCHBRUEVICH VL, 1977, FIZIKA POLUPROVODNIK

[7]

KIREJEW PS, 1974, PHYSIK HALBLEITER BE

[8] CALCULATION OF CARRIER AND LATTICE TEMPERATURES INDUCED IN SI BY PICOSECOND LASER-PULSES [J].

LIETOILA, A ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :624-626

[9] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV [J].

PHILIPP, HR ;

TAFT, EA .

PHYSICAL REVIEW, 1960, 120 (01) :37-38

[10] TEMPERATURE-DEPENDENCE OF THE AUGER RECOMBINATION COEFFICIENT OF UNDOPED SILICON [J].

SVANTESSON, KG ;

NILSSON, NG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23) :5111-5120

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