ON THE INVESTIGATION OF LASER-INDUCED CARRIERS IN SILICON IN THE PICOSECOND TIME RANGE

[1] PICOSECOND ELLIPSOMETRY OF TRANSIENT ELECTRON-HOLE PLASMAS IN GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1974, 32 (20) : 1120 - 1123

[2] Bergner H., 1983, Wissenschaftliche Zeitschrift der Friedrich-Schiller-Universitaet Jena, Mathematisch-Naturwissenschaftliche Reihe, V32, P113

[3] SPATIALLY INHOMOGENEOUS CARRIER CONCENTRATION-DEPENDENCE OF THE REFLECTIVITY OF SEMICONDUCTORS [J]. OPTICAL AND QUANTUM ELECTRONICS, 1982, 14 (03) : 245 - 251

[4] BERGNER H, UNPUB

[5] BERGNER H, 1982, EXP TECHNIK PHYSIK, V30, P407

[6] BONCHBRUEVICH VL, 1977, FIZIKA POLUPROVODNIK

[7] KIREJEW PS, 1974, PHYSIK HALBLEITER BE

[8] CALCULATION OF CARRIER AND LATTICE TEMPERATURES INDUCED IN SI BY PICOSECOND LASER-PULSES [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 624 - 626

[9] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV [J]. PHYSICAL REVIEW, 1960, 120 (01): : 37 - 38

[10] TEMPERATURE-DEPENDENCE OF THE AUGER RECOMBINATION COEFFICIENT OF UNDOPED SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23): : 5111 - 5120

[1] PICOSECOND ELLIPSOMETRY OF TRANSIENT ELECTRON-HOLE PLASMAS IN GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1974, 32 (20) : 1120 - 1123

[2] Bergner H., 1983, Wissenschaftliche Zeitschrift der Friedrich-Schiller-Universitaet Jena, Mathematisch-Naturwissenschaftliche Reihe, V32, P113

[3] SPATIALLY INHOMOGENEOUS CARRIER CONCENTRATION-DEPENDENCE OF THE REFLECTIVITY OF SEMICONDUCTORS [J]. OPTICAL AND QUANTUM ELECTRONICS, 1982, 14 (03) : 245 - 251

[4] BERGNER H, UNPUB

[5] BERGNER H, 1982, EXP TECHNIK PHYSIK, V30, P407

[6] BONCHBRUEVICH VL, 1977, FIZIKA POLUPROVODNIK

[7] KIREJEW PS, 1974, PHYSIK HALBLEITER BE

[8] CALCULATION OF CARRIER AND LATTICE TEMPERATURES INDUCED IN SI BY PICOSECOND LASER-PULSES [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 624 - 626

[9] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV [J]. PHYSICAL REVIEW, 1960, 120 (01): : 37 - 38

[10] TEMPERATURE-DEPENDENCE OF THE AUGER RECOMBINATION COEFFICIENT OF UNDOPED SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23): : 5111 - 5120