ISOTOPE-SHIFT AT SUBSTITUTIONAL CU IN ZNO

被引：21

作者：

VANVECHTEN, JA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1976年 / 13卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.13.946

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：946 / 949

页数：4

共 16 条

[1]

Brooks H., 1955, ADV ELECTRON, V7, P121

[2] ELECTRONIC CHARGE DENSITIES IN SEMICONDUCTORS [J].

COHEN, ML .

SCIENCE, 1973, 179 (4079) :1189-1195

[3]

CONFER ST, 1975, PHYS REV B, V12, P2543

[4] EXCITONS AND ABSORPTION EDGE OF ZNO [J].

DIETZ, RE ;

THOMAS, DG ;

HOPFIELD, JJ .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2282-&

[5] LUMINESCENT TRANSITIONS ASSOCIATED WITH DIVALENT COPPER IMPURITIES AND GREEN EMISSION FROM SEMICONDUCTING ZINC OXIDE [J].

DINGLE, R .

PHYSICAL REVIEW LETTERS, 1969, 23 (11) :579-&

[6] THEORY OF ISOTOPE-SHIFT FOR ZERO-PHONON OPTICAL-TRANSITIONS AT TRAPS IN SEMICONDUCTORS [J].

HEINE, V ;

HENRY, CH .

PHYSICAL REVIEW B, 1975, 11 (10) :3795-3803

[7]

HEINE VF, TO BE PUBLISHED

[8] ANISOTROPY IN LATTICE VIBRATIONS OF ZINC OXIDE [J].

HELTEMES, EC ;

SWINNEY, HL .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) :2387-&

[9] Atomic shielding constants [J].

Slater, JC .

PHYSICAL REVIEW, 1930, 36 (01) :0057-0064

[10]

Van Vechten J. A., 1975, Lattice Defects in Semiconductors, 1974, P212

← 1 2 →