ISOTOPE-SHIFT AT SUBSTITUTIONAL CU IN ZNO

被引：21

作者：

VANVECHTEN, JA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1976年 / 13卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.13.946

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：946 / 949

页数：4

共 16 条

[1] Brooks H., 1955, ADV ELECTRON, V7, P121
[2] ELECTRONIC CHARGE DENSITIES IN SEMICONDUCTORS
COHEN, ML
[J]. SCIENCE, 1973, 179 (4079) : 1189 - 1195
[3] CONFER ST, 1975, PHYS REV B, V12, P2543
[4] EXCITONS AND ABSORPTION EDGE OF ZNO
DIETZ, RE
THOMAS, DG
HOPFIELD, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2282 - &
[5] LUMINESCENT TRANSITIONS ASSOCIATED WITH DIVALENT COPPER IMPURITIES AND GREEN EMISSION FROM SEMICONDUCTING ZINC OXIDE
DINGLE, R
[J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 579 - &
[6] THEORY OF ISOTOPE-SHIFT FOR ZERO-PHONON OPTICAL-TRANSITIONS AT TRAPS IN SEMICONDUCTORS
HEINE, V
HENRY, CH
[J]. PHYSICAL REVIEW B, 1975, 11 (10): : 3795 - 3803
[7] HEINE VF, TO BE PUBLISHED
[8] ANISOTROPY IN LATTICE VIBRATIONS OF ZINC OXIDE
HELTEMES, EC
SWINNEY, HL
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) : 2387 - &
[9] Atomic shielding constants
Slater, JC
[J]. PHYSICAL REVIEW, 1930, 36 (01): : 0057 - 0064
[10] Van Vechten J. A., 1975, Lattice Defects in Semiconductors, 1974, P212