DENSITY OF STATES STUDY IN SPUTTERED A-SI-H - EFFECT OF IMPURITIES AND H-RELATED DEFECTS

被引：9
|
作者：
VIKTOROVITCH, P [1 ]
MODDEL, G [1 ]
BLAKE, J [1 ]
OGUZ, S [1 ]
WEISFIELD, RL [1 ]
PAUL, W [1 ]
机构：
[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138
来源：
JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期
关键词：
D O I：
10.1051/jphyscol:1981495
中图分类号：
学科分类号：
摘要：
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页码：455 / 458
页数：4
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