A 180-STAGE INTEGRATED THIN-FILM SCAN GENERATOR

被引：22

作者：

WEIMER, PK

SADASIV, G

MERAYHOR.L

HOMA, WS

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1966年 / 54卷 / 03期

关键词：

D O I：

10.1109/PROC.1966.4696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：354 / &

共 14 条

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BUDO, Y .

SOLID-STATE ELECTRONICS, 1965, 8 (05) :479-&

[2]

GRAY S, 1959, RCA REV, V20, P413

[3]

Hass B. G., 1964, PHYS THIN FILMS, V2, P147

[4] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

HOFSTEIN, SR ;

HEIMAN, FP .

PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1190-&

[5] A TIN OXIDE FIELD-EFFECT TRANSISTOR [J].

KLASENS, HA ;

KOELMANS, H .

SOLID-STATE ELECTRONICS, 1964, 7 (09) :701-702

[6] GROWN-FILM SILICON TRANSISTORS ON SAPPHIRE [J].

MUELLER, CW ;

ROBINSON, PH .

PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1487-&

[7]

SHALLCROSS FV, 1963, RCA REV, V24, P676

[8]

THUN R, 1964, PHYSICS THIN FILM ED, V2, P147

[9]

WEIMER PK, 1963, RCA REV, V24, P661

[10] INTEGRATED CIRCUITS INCORPORATING THIN-FILM ACTIVE + PASSIVE ELEMENTS [J].

WEIMER, PK ;

SHALLCROSS, FV ;

SADASIV, G ;

BORKAN, H ;

MERAYHOR.L .

PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1479-&

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