GOLD-SILICON PHASE-DIAGRAM

被引：30

作者：

ANANTATMULA, RP ^{[1
]}

JOHNSON, AA ^{[1
]}

GUPTA, SP ^{[1
]}

HORYLEV, RJ ^{[1
]}

机构：

[1] WASHINGTON STATE UNIV,DEPT MAT SCI & ENGN,PULLMAN,WA 99163

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1975年 / 4卷 / 03期

关键词：

D O I：

10.1007/BF02666229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：445 / 463

页数：19

共 18 条

[1] EUTECTIC DECOMPOSITION IN GOLD-SILICON SYSTEM [J].

ANDERSEN, GA ;

BESTEL, JL ;

JOHNSON, AA ;

POST, B .

MATERIALS SCIENCE AND ENGINEERING, 1971, 7 (02) :83-&

[2]

BOLTAKS BI, 1961, SOV PHYS-SOL STATE, V2, P2134

[3]

BOLTAKS BI, 1960, FIZ TVERD TELA, V2, P2395

[4]

CAPUA CD, 1920, REND ACCAD NAZ LINCE, V29, P111

[5] THERMAL PROPERTIES OF GOLD-SILICON BINARY ALLOY NEAR EUTECTIC COMPOSITION [J].

CHEN, HS ;

TURNBULL, D .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3646-&

[6] PROPERTIES OF GOLD-DOPED SILICON [J].

COLLINS, CB ;

CARLSON, RO ;

GALLAGHER, CJ .

PHYSICAL REVIEW, 1957, 105 (04) :1168-1173

[7]

DRIXMIER J, 1967, REV MET, V64, P53

[8]

ELLIOTT RP, 1965, CONSTITUTION BINARY

[9] GOLD SILICON PHASE DIAGRAM [J].

GERLACH, W ;

GOEL, B .

SOLID-STATE ELECTRONICS, 1967, 10 (06) :589-&

[10] An X-ray study of the binary alloys of silicon with Ag, Au, Pb, Sn, Zn, Cd, Sb and Bi [J].

Jette, ER ;

Gebert, EB .

JOURNAL OF CHEMICAL PHYSICS, 1933, 1 (11) :753-755

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