VERY LOW THRESHOLD CURRENT 1.3-MU-M INASYP1-Y/INP BH STRAINED-LAYER QUANTUM-WELL LASER-DIODES GROWN BY MOCVD

被引：4
|
作者：
KASUKAWA, A
IWAI, N
NAMEGAYA, T
KIKUTA, T
机构：
[1] Opto-electronics Technology Research Co. Ltd., Yokohama R&D Laboratories, Furukawa Electric Co. Ltd., Yokohama 220, 2-4-3, Okano, Nishi-ku
[2] Yokohama R&D Laboratories, Furukawa Electric Co. Ltd., Yokohama 220, 2-4-3, Okano, Nishi-ku
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 25期
关键词：
SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19921515
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Very low threshold current operation of all MOCVD grown buried heterostructure 1.3 mum InAsP/InP strained-layer double quantum well laser diodes is reported for the first time. A very low CW threshold current of 1.8 mA was obtained in a HR coated 200 mum-long device. The maximum CW operating temperature was 120-degrees-C with a characteristic temperature of 62 K in the temperature range 20-60-degrees-C.
引用
收藏
页码：2351 / 2353
页数：3
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