EXCITON BINDING-ENERGY AND SUBBAND STRUCTURES OF GAAS/ALXGA1-XAS SUPERLATTICES

被引：16

作者：

CHUU, DS

LOU, YC

机构：

[1] Department of Electrophysics, National Chiao Tung University, Hsinchu

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.43.14504

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The subband structure and the binding energy of an exciton in the GaAs/Al(x)Ga(1-x)As superlattice are studied by a simple approximation method. Both the exciton binding energy and the subband energy are expressed as a function of well width, barrier width, and Al composition. The influence of the effective-mass mismatch is taken into account. The energy spacings between interband or intersubband transitions are calculated and compared with the observed data. Good agreement is obtained.

引用

页码：14504 / 14512

页数：9

共 36 条

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