EXCITON BINDING-ENERGY AND SUBBAND STRUCTURES OF GAAS/ALXGA1-XAS SUPERLATTICES

被引：16
作者：
CHUU, DS
LOU, YC
机构：
[1] Department of Electrophysics, National Chiao Tung University, Hsinchu
来源：
PHYSICAL REVIEW B | 1991年 / 43卷 / 18期
关键词：
D O I：
10.1103/PhysRevB.43.14504
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The subband structure and the binding energy of an exciton in the GaAs/Al(x)Ga(1-x)As superlattice are studied by a simple approximation method. Both the exciton binding energy and the subband energy are expressed as a function of well width, barrier width, and Al composition. The influence of the effective-mass mismatch is taken into account. The energy spacings between interband or intersubband transitions are calculated and compared with the observed data. Good agreement is obtained.
引用
收藏
页码：14504 / 14512
页数：9
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