EFFECT OF INERT ION-BOMBARDMENT ON CHEMISORPTION AND ETCHING OF ALUMINUM FILMS IN CL-2, BR-2, CCL4, AND CBR4

[1] QUASIEQUILIBRIUM TREATMENT OF GAS-SOLID REACTIONS .I. EVAPORATION RATES OF VOLATILE SPECIES FORMED IN REACTION OF O2 WITH W, MO, AND C [J]. JOURNAL OF CHEMICAL PHYSICS, 1969, 51 (10) : 4475 - &

[2] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[3] Flamm DL, 1981, PLASMA CHEM PLASMA P, V1, P37, DOI DOI 10.1007/BF00566374

[4] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION [J]. SURFACE SCIENCE, 1981, 103 (01) : 177 - 188

[5] Hamrin K., 1970, Physica Scripta, V1, P277, DOI 10.1088/0031-8949/1/5-6/018

[6] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 174 - 176

[7] Hess D.W., 1982, PLASMA CHEM PLASMA P, V2, P141, DOI [10.1007/BF00633130, DOI 10.1007/BF00633130]

[8] ALUMINUM BROMIDE CLUSTERS [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1984, 106 (03) : 623 - 624

[9] ROTH J, 1983, SPUTTERING PARTICLE, V3

[10] ION-ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 487 - 491

[1] QUASIEQUILIBRIUM TREATMENT OF GAS-SOLID REACTIONS .I. EVAPORATION RATES OF VOLATILE SPECIES FORMED IN REACTION OF O2 WITH W, MO, AND C [J]. JOURNAL OF CHEMICAL PHYSICS, 1969, 51 (10) : 4475 - &

[2] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[3] Flamm DL, 1981, PLASMA CHEM PLASMA P, V1, P37, DOI DOI 10.1007/BF00566374

[4] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION [J]. SURFACE SCIENCE, 1981, 103 (01) : 177 - 188

[5] Hamrin K., 1970, Physica Scripta, V1, P277, DOI 10.1088/0031-8949/1/5-6/018

[6] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 174 - 176

[7] Hess D.W., 1982, PLASMA CHEM PLASMA P, V2, P141, DOI [10.1007/BF00633130, DOI 10.1007/BF00633130]

[8] ALUMINUM BROMIDE CLUSTERS [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1984, 106 (03) : 623 - 624

[9] ROTH J, 1983, SPUTTERING PARTICLE, V3

[10] ION-ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 487 - 491