共 50 条
[31]
GROWTH MECHANISM AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL-FILMS
[J].
ZEITSCHRIFT FUR KRISTALLOGRAPHIE,
1977, 146 (1-3)
:115-115
[34]
GAAS-LAYERS GROWN ON 100-MM DIAMETER SUBSTRATES IN A LIQUID-PHASE EPITAXY CENTRIFUGE
[J].
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993,
1994, 136 (136)
:829-830
[36]
Growth of GaAsxSb1 - x Layers on InAs Substrates by the Method of Liquid-phase Epitaxy.
[J].
Neorganiceskie materialy,
1981, 17 (05)
:783-785
[39]
Surface photovoltage and photoluminescence study of thick Ga(In)AsN layers grown by liquid-phase epitaxy
[J].
19TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON AND ION TECHNOLOGIES (VEIT2015),
2016, 700