RELATIONSHIP BETWEEN SURFACE-TREATMENT OF ZNTE SUBSTRATES AND MORPHOLOGY OF CDSE EPITAXIAL LAYERS IN LIQUID-PHASE EPITAXY

被引:2
|
作者
ONOME, S [1 ]
YAMADA, T [1 ]
SANO, M [1 ]
AOKI, M [1 ]
机构
[1] FAC IND SCI & TECHNOL CHIBA, DEPT APPL ELECTR ENGN, CHIBA 278, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1989年 / 28卷 / 09期
关键词
D O I
10.1143/JJAP.28.1648
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1648 / 1653
页数:6
相关论文
共 50 条
  • [1] LIQUID-PHASE EPITAXY OF CDSE, ZNSE AND ZNTE LAYERS
    SIMASHKEVICH, AV
    TSIULYANU, RL
    JOURNAL OF CRYSTAL GROWTH, 1976, 35 (03) : 269 - 272
  • [2] SURFACE MORPHOLOGY OF LIQUID-PHASE EPITAXIAL LAYERS
    SAUL, RH
    ROCCASECCA, DD
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) : 1983 - 1988
  • [3] MORPHOLOGY OF EPITAXIAL SILICON LAYERS, OBTAINED BY LIQUID-PHASE EPITAXY
    KOZHITOV, LV
    VOLKOV, MP
    RJAZANOV, SV
    KRISTALLOGRAFIYA, 1986, 31 (06): : 1185 - 1188
  • [4] Surface morphology of silicon layers grown on patterned silicon substrates by liquid-phase epitaxy
    Weber, KJ
    Catchpole, KR
    JOURNAL OF CRYSTAL GROWTH, 1999, 204 (04) : 453 - 461
  • [5] SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL LAYERS
    BAUSER, E
    FRIK, M
    LOECHNER, KS
    SCHMIDT, L
    ULRICH, R
    JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 148 - 153
  • [6] MORPHOLOGY OF EPITAXIAL PB1-XSNXSE LAYERS OBTAINED BY LIQUID-PHASE EPITAXY
    PETUKHOV, AP
    TALLERCHIK, BA
    ANDREEV, YV
    KRUPENNIKOV, VA
    POLYANSKII, AV
    INORGANIC MATERIALS, 1979, 15 (08) : 1045 - 1048
  • [7] SURFACE-MORPHOLOGY OF GAAS-LAYERS GROWN BY LIQUID-PHASE EPITAXY
    MARUYAMA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (07) : 1217 - 1222
  • [8] Epitaxial Growth of ZnTe Layers on ZnO Bulk Substrates by Metalorganic Vapor Phase Epitaxy
    Akiyama, Hajime
    Hirano, Hiroyuki
    Saito, Katsuhiko
    Tanaka, Tooru
    Nishio, Mitsuhiro
    Guo, Qixin
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
  • [9] SPECIFIC STRUCTURAL FEATURES OF GAAS EPITAXIAL LAYERS GROWN BY THE LIQUID-PHASE EPITAXY ON SI(111) SUBSTRATES
    ABRAMOV, AV
    DERYAGIN, NG
    MILVIDSKII, MG
    TRETYAKOV, DN
    YUGOVA, TG
    KRISTALLOGRAFIYA, 1995, 40 (05): : 906 - 912
  • [10] GROWTH OF INGAP EPITAXIAL LAYERS BY LIQUID-PHASE ELECTRO-EPITAXY
    YANAGASE, M
    TANAKA, S
    HIRAMATSU, K
    AKASAKI, I
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 304 - 308