EPITAXIAL-GROWTH OF SI FILMS ON CAF2/SI STRUCTURES WITH THIN SI LAYERS PREDEPOSITED AT ROOM-TEMPERATURE

被引：54
|
作者：
ASANO, T
ISHIWARA, H
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期
关键词：
D O I：
10.1063/1.332947
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3566 / 3570
页数：5
相关论文
共 50 条
  • [41] Luminescence of Nanocrystalline Si in (Si + CaF2)/CaF2 Structures in the Visible Range of the Spectrum
    Velichko, A. A.
    Ilyushin, V. A.
    Krupin, A. Yu
    Filimonova, N., I
    RUSSIAN PHYSICS JOURNAL, 2021, 64 (02) : 198 - 202
  • [42] EFFECTS OF A PREDEPOSITED BORON LAYER DURING THE EPITAXIAL-GROWTH OF GE ON CAF2
    CHO, CC
    LIU, HY
    MAGEL, LK
    ANTHONY, JM
    APPLIED PHYSICS LETTERS, 1993, 63 (24) : 3291 - 3293
  • [43] FABRICATION OF MOSFETS IN SI/CAF2/SI HETEROEPITAXIAL STRUCTURES
    ASANO, T
    KURIYAMA, Y
    ISHIWARA, H
    ELECTRONICS LETTERS, 1985, 21 (09) : 386 - 387
  • [44] EPITAXIAL-GROWTH OF COSI2/SI STRUCTURES
    BULLELIEUWMA, CWT
    APPLIED SURFACE SCIENCE, 1993, 68 (01) : 1 - 18
  • [45] Epitaxial growth of CaF2 films on Si(111) studied by scanning tunneling microscopy
    Kametani, K
    Sudoh, K
    Iwasaki, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (01): : 250 - 255
  • [46] THIN SI FILMS CAN FORM AT ROOM-TEMPERATURE
    COHEN, C
    ELECTRONICS-US, 1981, 54 (22): : 82 - +
  • [47] EPITAXIAL-GROWTH OF COSI2 FILMS ON SI
    SAITOH, S
    ISHIWARA, H
    FURUKAWA, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C95 - C95
  • [48] GROWTH OF EPITAXIAL NISI2 ON SI(111) AT ROOM-TEMPERATURE
    TUNG, RT
    SCHREY, F
    APPLIED PHYSICS LETTERS, 1989, 55 (03) : 256 - 258
  • [49] Epitaxial growth of Fe3Si/CaF2/Si(111) hybrid structures by molecular beam epitaxy
    Kobayashi, K.
    Sunohara, T.
    Umada, M.
    Yanagihara, H.
    Kita, E.
    Suemasu, T.
    THIN SOLID FILMS, 2006, 508 (1-2) : 78 - 81
  • [50] Epitaxial growth of ferromagnetic Fe3Si films on CaF2/Si(111) by molecular beam epitaxy
    Sunohara, T
    Kobayashi, K
    Umada, M
    Yanagihara, H
    Kita, E
    Akinaga, H
    Suemasu, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (20-23): : L715 - L717
12345