EPITAXIAL-GROWTH OF SI FILMS ON CAF2/SI STRUCTURES WITH THIN SI LAYERS PREDEPOSITED AT ROOM-TEMPERATURE

被引：54
作者：
ASANO, T
ISHIWARA, H
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期
关键词：
D O I：
10.1063/1.332947
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3566 / 3570
页数：5
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