SELECTIVE LASER-ENHANCED GAS-SURFACE REACTIONS OF III-V COMPOUND SEMICONDUCTORS

被引：0

作者：

ASHBY, CIH ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1984年 / 188卷 / AUG期

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：181 / COLL

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