A 2-LAYER MAGNETO-TLM CONTACT RESISTANCE MODEL - APPLICATION TO MODULATION-DOPED FET STRUCTURES

被引：17

作者：

LOOK, DC ^{[1
]}

机构：

[1] USAF, AVION LAB, WRIGHT PATTERSON AFB, OH 45433 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 02期

关键词：

D O I：

10.1109/16.2431

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：133 / 138

页数：6

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