INVESTIGATIONS ON LOW-TEMPERATURE MO-CVD GROWTH OF GAAS

被引：24

作者：

KRAUTLE, H

ROEHLE, H

ESCOBOSA, A

BENEKING, H

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 01期

关键词：

D O I：

10.1007/BF02651643

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：215 / 222

页数：8

共 16 条

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[2]

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[4] ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

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CHIN, R .

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[5]

EROLOV IA, 1977, RUSSIA J PHYS CHEM, V51, P651

[6] LOW-TEMPERATURE GROWTH OF MOCVD GAAS-LAYERS AT ATMOSPHERIC-PRESSURE [J].

ESCOBOSA, A ;

KRAUTLE, H ;

BENEKING, H .

JOURNAL OF CRYSTAL GROWTH, 1982, 57 (03) :605-606

[7]

HEYEN M, UNPUB PROG CRYST GRO

[8]

HOLOWAY H, 1967, J APPL PHYS, V38, P2893

[9]

LERAUX M, 1980, J CRYST GROWTH, V48, P367

[10]

LIN AL, 1977, 6TH P INT C CVD, P264

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