PHOTOEMISSION-STUDIES OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS (001) SURFACES EXPOSED TO A NITROGEN PLASMA

被引：52
作者：
GOURRIER, S
SMIT, L
FRIEDEL, P
LARSEN, PK
机构：
[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
[2] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 07期
关键词：
D O I：
10.1063/1.332578
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3993 / 3997
页数：5
相关论文
共 14 条
[1]  
BAYRAKTAROGLU B, 1980, PHYSICS MOS INSULATO, P207
[2]   IMPROVEMENTS IN GAAS PLASMA-DEPOSITED SILICON-NITRIDE INTERFACE QUALITY BY PRE-DEPOSITION GAAS SURFACE-TREATMENT AND POST-DEPOSITION ANNEALING [J].
CLARK, MD ;
ANDERSON, CL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :453-456
[3]   INTERACTIONS BETWEEN H-2 AND N-2 PLASMAS AND A GAAS(100) SURFACE - CHEMICAL AND ELECTRONIC-PROPERTIES [J].
FRIEDEL, P ;
GOURRIER, S .
APPLIED PHYSICS LETTERS, 1983, 42 (06) :509-511
[4]  
FRIEDEL P, 1982, THESIS U PARIS 11 OR
[5]  
FRIEDEL P, UNPUB
[6]  
GOURRIER S, 1981, PLASMA CHEM PLASMA P, V1, P217
[7]  
LARSEN PK, 1982, PHYS REV B, V26, P3222, DOI 10.1103/PhysRevB.26.3222
[8]   GAAS(001)-C (4X4) - A CHEMISORBED STRUCTURE [J].
LARSEN, PK ;
NEAVE, JH ;
VANDERVEEN, JF ;
DOBSON, PJ ;
JOYCE, BA .
PHYSICAL REVIEW B, 1983, 27 (08) :4966-4977
[9]   ANGLE-RESOLVED PHOTOEMISSION FROM AS-STABLE GAAS (001) SURFACES PREPARED BY MBE [J].
LARSEN, PK ;
NEAVE, JH ;
JOYCE, BA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (02) :167-192
[10]   DESIGN AND PERFORMANCE OF A TOROIDAL GRAZING-INCIDENCE MONOCHROMATOR FOR THE 20-200 EV PHOTON ENERGY-RANGE [J].
LARSEN, PK ;
VANBERS, WAM ;
BIZAU, JM ;
WUILLEUMIER, F ;
KRUMMACHER, S ;
SCHMIDT, V ;
EDERER, D .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 195 (1-2) :245-250
12