VERY LOW-TEMPERATURE GROWTH AND DOPING OF HG-BASED EPILAYERS AND SUPERLATTICES

被引：2

作者：

LANSARI, Y

YANG, Z

HWANG, S

REED, FE

SOWERS, AT

COOK, JW

SCHETZINA, JF

机构：

[1] Department of Physics, North Carolina State University, Raleigh

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91069-M

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Photoassisted MBE growth of Hg-based thin films at very low temperatures (125-150-degrees-C) is reported. Substitutionally doped superlattices were also prepared at low temperatures, using modulation doping techniques in which In and As were used as n-type and p-type dopants, respectively. The doped superlattices exhibit excellent electrical properties and optical properties characteristic of 2D quantum structures. Analysis of the measured absorption data yields a valence band offset of approximately 350 meV for the HgTe-CdTe interface.

引用

页码：720 / 724

页数：5

共 10 条

[1] LAYER INTERMIXING IN HGTE-CDTE SUPERLATTICES [J].

ARCH, DK ;

STAUDENMANN, JL ;

FAURIE, JP .

APPLIED PHYSICS LETTERS, 1986, 48 (23) :1588-1590

[2] GROWTH OF HIGH MOBILITY N-TYPE CDTE BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

GILES, NC ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1095-1097

[3] FIELD-EFFECT TRANSISTORS IN HG1-XCDXTE GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J].

DREIFUS, DL ;

KOLBAS, RM ;

HAN, JW ;

COOK, JW ;

SCHETZINA, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02) :1221-1225

[4] DILUTED MAGNETIC SEMICONDUCTOR (CD1-XMNXTE) SCHOTTKY DIODES AND FIELD-EFFECT TRANSISTORS [J].

DREIFUS, DL ;

KOLBAS, RM ;

HARPER, RL ;

TASSITINO, JR ;

HWANG, S ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1988, 53 (14) :1279-1281

[5] MODULATION-DOPED HGCDTE QUANTUM-WELL STRUCTURES AND SUPERLATTICES [J].

HAN, JW ;

HWANG, S ;

LANSARI, Y ;

YANG, Z ;

COOK, JW ;

SCHETZINA, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02) :205-209

[6] MICROSTRUCTURAL DEFECT REDUCTION IN HGCDTE GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J].

HARRIS, KA ;

MYERS, TH ;

YANKA, RW ;

MOHNKERN, LM ;

GREEN, RW ;

OTSUKA, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02) :1013-1019

[7] KINETICS OF MOLECULAR-BEAM EPITAXIAL HGCDTE GROWTH [J].

KOESTNER, RJ ;

SCHAAKE, HF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04) :2834-2839

[8] ULTRAHIGH ELECTRON AND HOLE MOBILITIES IN ZERO-GAP HG-BASED SUPERLATTICES [J].

MEYER, JR ;

HOFFMAN, CA ;

BARTOLI, FJ ;

HAN, JW ;

COOK, JW ;

SCHETZINA, JF ;

CHU, X ;

FAURIE, JP ;

SCHULMAN, JN .

PHYSICAL REVIEW B, 1988, 38 (03) :2204-2207

[9] MOLECULAR-BEAM EPITAXY OF CDXHG1-X TE AT D.LETI LIR [J].

MILLION, A ;

DICIOCCIO, L ;

GAILLIARD, JP ;

PIAGUET, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04) :2813-2820

[10] NOVEL BAND-TUNING EFFECTS IN HG-BASED QUANTUM STRUCTURES BY EXTERNAL ELECTRIC OR MAGNETIC-FIELDS [J].

YANG, Z ;

SCHETZINA, JF ;

FURDYNA, JK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02) :360-364

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