CALCULATION OF THE ELECTRONIC-STRUCTURE OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS

被引：1
作者：
KATAYAMAYOSHIDA, H [1 ]
SHINDO, K [1 ]
机构：
[1] IWATE UNIV,COLL HUMANITIES & SOCIAL SCI,MORIOKA,IWATE 020,JAPAN
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1983年 / 31-4卷 / FEB期
关键词：
D O I：
10.1016/0304-8853(83)90574-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：553 / 554
页数：2
相关论文
共 7 条
[1]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[2]   SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562
[3]   LOCALIZED-ORBITAL DESCRIPTION OF WAVE-FUNCTIONS AND ENERGY-BANDS IN SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1977, 16 (08) :3572-3578
[4]   SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS [J].
HALDANE, FDM ;
ANDERSON, PW .
PHYSICAL REVIEW B, 1976, 13 (06) :2553-2559
[5]  
LUDWIG GW, 1962, SOLID STATE PHYS, V13, P263
[6]   1ST-PRINCIPLES NONLOCAL-PSEUDOPOTENTIAL APPROACH IN THE DENSITY-FUNCTIONAL FORMALISM - DEVELOPMENT AND APPLICATION TO ATOMS [J].
ZUNGER, A ;
COHEN, ML .
PHYSICAL REVIEW B, 1978, 18 (10) :5449-5472
[7]  
ZUNGER A, COMMUNICATION
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