INFLUENCE OF RECOMBINATION IN EMITTERS ON THE PHOTO-LUMINESCENCE CHARACTERISTICS OF DOUBLE IN0.5GA0.5P-INGAASP HETEROSTRUCTURES

被引：0
作者：
TULASHVILI, EV
VAVILOVA, LS
GARBUZOV, DZ
ARSENTEV, IN
KHALFIN, VB
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 09期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1031 / 1034
页数：4
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