GROWTH OF INGAAS/INP OPTICAL MODULATOR STRUCTURES BY CHEMICAL BEAM EPITAXY

被引:9
作者
CHIU, TH
GOOSSEN, KW
WILLIAMS, MD
STORZ, FG
机构
[1] AT and T Bell Laboratories, Holmdel
关键词
D O I
10.1063/1.107027
中图分类号
O59 [应用物理学];
学科分类号
摘要
We show that the alloy composition and the period length of InGaAs/InP multiple quantum wells grown by chemical beam epitaxy is sensitive to the growth temperature and the As overpressure. Around 530-degrees-C, the inhomogeneous broadening of absorption edge due to growth temperature instability is more of a consequence of changing period length than the ternary composition. The arsenic overpressure dependence of the ternary composition is investigated by secondary ion mass spectroscopy for the first time. The Ga/In ratio becomes smaller at high arsine flow rate. Superlattices containing 50-100 periods of InGaAs/InP exhibit x-ray diffraction peak widths comparable to the InP substrate can be prepared under continuous growth mode. Clear quantum confined Stark effect is observed in the electroabsorption characteristics of a 74-period modulator.
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收藏
页码:2365 / 2367
页数:3
相关论文
共 12 条
[1]   THE INFLUENCE OF GROWTH-CONDITIONS ON THE GROWTH-RATE AND COMPOSITION OF GAAS AND GAINAS ALLOYS GROWN BY CHEMICAL BEAM EPITAXY [J].
ANDREWS, DA ;
DAVIES, GJ .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (06) :3187-3189
[2]   QUANTUM-CONFINED STARK-EFFECT IN INGAAS INP QUANTUM-WELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
BARJOSEPH, I ;
KLINGSHIRN, C ;
MILLER, DAB ;
CHEMLA, DS ;
KOREN, U ;
MILLER, BI .
APPLIED PHYSICS LETTERS, 1987, 50 (15) :1010-1012
[3]   SURFACE CHEMICAL-KINETICS DURING THE GROWTH OF GAAS BY CHEMICAL BEAM EPITAXY [J].
CHIU, TH ;
CUNNINGHAM, JE ;
ROBERTSON, A .
JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :136-139
[4]  
CHIU TH, 1990, SPIE P GROWTH SEMICO, V1285, P106
[5]   EXPERIMENTAL-STUDY OF INGAAS-INP MQW ELECTRO-ABSORPTION MODULATORS [J].
GUY, DRP ;
BESGROVE, DD ;
TAYLOR, LL ;
APSLEY, N ;
BASS, SJ .
IEE PROCEEDINGS-J OPTOELECTRONICS, 1989, 136 (01) :46-51
[6]   SUBSTRATE-TEMPERATURE DEPENDENCE OF GAAS, GALNAS, AND GAALAS GROWTH-RATES IN METALORGANIC MOLECULAR-BEAM EPITAXY [J].
KOBAYASHI, N ;
BENCHIMOL, JL ;
ALEXANDRE, F ;
GAO, Y .
APPLIED PHYSICS LETTERS, 1987, 51 (23) :1907-1909
[7]   EFFECT OF HYDROGEN MOLECULES ON GROWTH-RATES OF GAAS IN GAS SOURCE MOLECULAR-BEAM EPITAXY [J].
MARUNO, S ;
NOMURA, Y ;
OGATA, H ;
GOTODA, M ;
MORISHITA, Y .
JOURNAL OF CRYSTAL GROWTH, 1989, 97 (3-4) :578-582
[8]   ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J].
MILLER, DAB ;
CHEMLA, DS ;
DAMEN, TC ;
GOSSARD, AC ;
WIEGMANN, W ;
WOOD, TH ;
BURRUS, CA .
PHYSICAL REVIEW B, 1985, 32 (02) :1043-1060
[9]   EXCITON ELECTROABSORPTION AT ROOM-TEMPERATURE IN INGAAS/INP MULTIQUANTUM-WELL STRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOCVD [J].
MOSELEY, AJ ;
SCOTT, MD ;
WILLIAMS, PJ ;
WALLIS, RH ;
DAVIES, JI ;
RIFFAT, JR .
ELECTRONICS LETTERS, 1987, 23 (10) :516-518
[10]   FIELD-INDUCED ENERGY SHIFT OF EXCITONIC ABSORPTION IN INGAAS INP MULTIQUANTUM WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].
NOJIMA, S ;
KAWAGUCHI, Y ;
NAKASHIMA, K ;
WAKITA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (11) :1927-1928