VALENCE PHOTOELECTRON-SPECTROSCOPY OF GD SILICIDES

被引：15

作者：

BRAICOVICH, L

PUPPIN, E

LINDAU, I

IANDELLI, A

OLCESE, GL

PALENZONA, A

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

[2] UNIV GENOA,IST CHIM FIS,I-16132 GENOA,ITALY

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.41.3123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gd3Si5, GdSi, and Gd5Si3 were investigated with photoemission spectroscopy in the photon-energy range 40.8 149 eV by exploiting the energy dependence of the photoemission cross sections and the valence resonance at the crossing of the Gd 4d-4f threshold. The modification of the spectra versus photon energy, along with their stoichiometry dependence, show the relevance of covalent mixed Gd 5d Si 3sp states in the formation of the chemical bond. In the region close to the Fermi level an increase of the d contribution is observed. These points are discussed in connection with the existing models of the silicide bond. © 1990 The American Physical Society.

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页码：3123 / 3127

页数：5

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