NONVOLATILE MEMORIES

被引：0
|
作者：
MYRVAAGNES, R
机构：
来源：
ELECTRONIC PRODUCTS MAGAZINE | 1989年 / 32卷 / 06期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：79 / 81
页数：3
相关论文
共 50 条
  • [21] Evolution and Advances of the Nonvolatile Memories and Applications
    Li, Yan
    2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2019,
  • [22] Reliable Nonvolatile Memories: Techniques and Measures
    Swami, Shivam
    Mohanram, Kartik
    IEEE DESIGN & TEST, 2017, 34 (03) : 31 - 41
  • [23] TUNNELLING THEORIES OF NONVOLATILE SEMICONDUCTOR MEMORIES
    FERRISPRABHU, AV
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (01): : 243 - 250
  • [24] Fast tunneling programming of nonvolatile memories
    Versari, R
    Pieracci, A
    Morigi, D
    Riccó, B
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (06) : 1297 - 1299
  • [25] Special issue on nonvolatile memories - Foreword
    Ishiwara, H
    IEICE TRANSACTIONS ON ELECTRONICS, 2001, E84C (06) : 711 - 712
  • [26] NONVOLATILE, IN-CIRCUIT-REPROGRAMMABLE MEMORIES
    LEIBSON, SH
    EDN, 1991, 36 (01) : 89 - &
  • [27] Ferroelectric nonvolatile memories for embedded applications
    Jones, RE
    IEEE 1998 CUSTOM INTEGRATED CIRCUITS CONFERENCE - PROCEEDINGS, 1998, : 431 - 438
  • [28] Spreading Modulation for Multilevel Nonvolatile Memories
    Luo, Tianqiong
    Peleato, Borja
    IEEE TRANSACTIONS ON COMMUNICATIONS, 2016, 64 (03) : 1110 - 1119
  • [29] Evolution and Advances of the Nonvolatile Memories and Applications
    Li, Yan
    2019 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT), 2019,
  • [30] Fabrication of a Vertical Nanogap for Nonvolatile Memories
    Furuta, S.
    Masuda, Y.
    Takahashi, T.
    Ono, M.
    Naitoh, Y.
    Shimizu, T.
    NONVOLATILE MEMORIES, 2013, 50 (34): : 71 - 76
12345