INFLUENCE OF ELECTRON-ELECTRON INTERACTION ON ENERGY RELAXATION-TIME OF N-TYPE SI

被引：0

作者：

DENIS, VI ^{[1
]}

KANTSLERIS, ZV ^{[1
]}

机构：

[1] ACAD SCI LISSR,SEMICOND PHYS INST,VILNIUS,LISSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 8卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：918 / 918

页数：1

共 12 条

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[4] DEPENDENCE OF PHENOMENOLOGICAL ENERGY RELAXATION-TIME ON ELECTRIC-FIELD IN N-SI AND N-GE AT 77 DEGREE K [J].

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[5]

DENIS VI, 1974, FIZ TEKH POLUPROVODN, V8, P1404

[6]

DENIS VI, 1971, LIT FIZ SB, V11, P607

[7] ENERGY RELAXATION OF WARM CARRIERS IN GERMANIUM AND SILICON [J].

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[8]

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[9]

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[10]

LEVINSON IB, 1966, SOV PHYS JETP-USSR, V23, P697

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