THE EFFECT OF THE SEMICONDUCTOR SURFACE-TREATMENT ON LB FILM/SI INTERFACE

被引:0
作者
BARANCOK, D
CIRAK, J
LIDAY, J
PINCIK, E
TOMCIK, P
机构
[1] SLOVAK UNIV TECHNOL BRATISLAVA, FAC ELECT ENGN, DEPT MICROELECTR, CS-81219 BRATISLAVA, SLOVAKIA
[2] SLOVAK ACAD SCI, INST PHYS, CS-84228 BRATISLAVA, SLOVAKIA
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1995年 / 147卷 / 02期
关键词
D O I
10.1002/pssa.2211470241
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:K87 / K90
页数:4
相关论文
共 10 条
[1]   DLTS MEASUREMENTS ON METAL LANGMUIR-BLODGETT FILMS/SI STRUCTURES [J].
BARANCOK, D ;
CIRAK, J ;
TOMCIK, P ;
BRYNDA, E ;
NESPUREK, S .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1993, 138 (01) :191-198
[2]  
DESEVOJ AS, 1985, MIKROELEKTRONIKA, V14, P359
[3]   THE STUDY OF METAL-INSULATOR SEMICONDUCTOR STRUCTURES WITH LANGMUIR-BLODGETT INSULATORS [J].
DEWA, AS ;
FUNG, CD ;
DIPOTO, EP ;
RICKERT, SE .
THIN SOLID FILMS, 1985, 132 (1-4) :27-32
[4]   U-SHAPED DISTRIBUTIONS AT SEMICONDUCTOR INTERFACES AND THE NATURE OF THE RELATED DEFECT CENTERS [J].
FLIETNER, H .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1985, 91 (01) :153-164
[5]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[6]   INTEGRATED METAL LANGMUIR SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].
LARKINS, GL ;
FUNG, CD ;
RICKERT, SE .
THIN SOLID FILMS, 1989, 180 :217-225
[7]   AMORPHOUS-SILICON LANGMUIR-BLODGETT FILM FIELD-EFFECT TRANSISTOR [J].
LLOYD, JP ;
PETTY, MC ;
ROBERTS, GG ;
LECOMBER, PG ;
SPEAR, WE .
THIN SOLID FILMS, 1983, 99 (1-3) :297-304
[8]  
PETTY MC, 1980, I PHYS C SER, V50, P186
[9]  
Thurzo I., 1985, Ceskoslovensky Casopis pro Fyziku, Sekce A, V35, P253
[10]  
THURZO I, 1984, PHYS STATUS SOLIDI A, V86, P759