QUANTUM HOLE TRANSPORT AT THE HETEROINTERFACE OF LONG WAVELENGTH AVALANCHE PHOTODIODES

Quantum hole transport at the heterointerfaces of InGaAs-InP long wavelength avalanche photodiodes is studied based upon the Wigner function model for the first time. At the heterointerface, three types of quantum size structures are inserted to eliminate the photoexcited hole trapping. They are the thin quaternary layer, the thin graded band-gap layer, and the doping interface dipole layer. The dependence of hole accumulation on the inserted layer structure is discussed. It is shown that the theoretical reduction limits of hole pile-up can be realized even by the insertion of quantum size layers.