MATHEMATICAL PROOF OF THE VALIDITY OF RECIPROCITY IN ONE-DIMENSIONAL BIPOLAR-TRANSISTORS WITH ARBITRARY BASE PARAMETERS

被引:10
作者
DEMAN, HJ
GHANNAM, MY
MERTENS, RP
机构
关键词
D O I
10.1109/T-ED.1984.21777
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1720 / 1723
页数:4
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[2]  
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[3]  
MULLER RS, 1977, DEVICE ELECTRONICS I, P227
[4]  
PEARSON CE, 1974, HDB APPLIED MATH, P293
[5]   TRANSPORT EQUATIONS IN HEAVY DOPED SILICON [J].
VANOVERSTRAETEN, RJ ;
DEMAN, HJ ;
MERTENS, RP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :290-298