PIEZOELECTRIC EFFECTS IN GAAS-FETS AND THEIR ROLE IN ORIENTATION-DEPENDENT DEVICE CHARACTERISTICS

被引：88
作者：
ASBECK, PM
LEE, CP
CHANG, MCF
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 10期
关键词：
D O I：
10.1109/T-ED.1984.21719
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1377 / 1380
页数：4
相关论文
共 9 条
[1]   ENHANCED X-RAY DIFFRACTION FROM SUBSTRATE CRYSTALS CONTAINING DISCONTINUOUS SURFACE FILMS [J].
BLECH, IA ;
MEIERAN, ES .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2913-&
[2]   DISLOCATIONS AND PIEZOELECTRIC EFFECT IN 3-5 CRYSTALS [J].
BOOYENS, H ;
VERMAAK, JS ;
PROTO, GR .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) :3008-3013
[3]   MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE [J].
JACCODINE, RJ ;
SCHLEGEL, WA .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2429-+
[4]   PHOTO-ELASTIC WAVEGUIDES AND THEIR EFFECT ON STRIPE-GEOMETRY GAAS-GA1-XALXAS LASERS [J].
KIRKBY, PA ;
SELWAY, PR ;
WESTBROOK, LD .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4567-4579
[5]   ORIENTATION EFFECT ON PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].
LEE, CP ;
ZUCCA, R ;
WELCH, BM .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :311-313
[6]   EFFECT OF REACTANT NITROGEN PRESSURE ON MICROSTRUCTURE AND PROPERTIES OF REACTIVELY SPUTTERED SILICON-NITRIDE FILMS [J].
MOGAB, CJ ;
PETROFF, PM ;
SHENG, TT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) :815-822
[7]   LSI PROCESSING TECHNOLOGY FOR PLANAR GAAS INTEGRATED-CIRCUITS [J].
WELCH, BM ;
SHEN, Y ;
ZUCCA, R ;
EDEN, RC ;
LONG, SI .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1116-1124
[8]   ORIENTATION EFFECT OF SELF-ALIGNED SOURCE DRAIN PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].
YOKOYAMA, N ;
ONODERA, H ;
OHNISHI, T ;
SHIBATOMI, A .
APPLIED PHYSICS LETTERS, 1983, 42 (03) :270-271
[9]  
1969, LANDOLTBORNSTEIN
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