EFFECT OF EXPOSURE TO GROUP-III ALKYLS ON COMPOUND SEMICONDUCTOR SURFACES OBSERVED BY X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：29

作者：

ISHII, H

OHNO, H

MATSUZAKI, K

HASEGAWA, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90365-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：132 / 135

页数：4

共 10 条

[1] GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY [J].

DENBAARS, SP ;

BEYLER, CA ;

HARIZ, A ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1987, 51 (19) :1530-1532

[2]

DOI A, 1988, JPN J APPL PHYS 1, V27, P795, DOI 10.1143/JJAP.27.795

[3] MICROSCOPIC EFFECTS AT GAAS/GE(100) MOLECULAR-BEAM-EPITAXY INTERFACES - SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY [J].

KATNANI, AD ;

CHIARADIA, P ;

SANG, HW ;

ZURCHER, P ;

BAUER, RS .

PHYSICAL REVIEW B, 1985, 31 (04) :2146-2156

[4] GAAS GROWTH BY ATOMIC LAYER EPITAXY USING DIETHYLGALLIUMCHLORIDE [J].

MORI, K ;

YOSHIDA, M ;

USUI, A ;

TERAO, H .

APPLIED PHYSICS LETTERS, 1988, 52 (01) :27-29

[5] GALLIUM-ARSENIDE THIN-FILMS BY LOW-TEMPERATURE PHOTOCHEMICAL PROCESSES [J].

NISHIZAWA, J ;

KURABAYASHI, T ;

ABE, H ;

SAKURAI, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1572-1577

[6]

NISHIZAWA J, 1985, J ELECTROCHEM SOC, V132, P1198

[7]

OHNO H, UNPUB

[8] STRUCTURE OF GAAS(001) (2X4)-C(2X8) DETERMINED BY SCANNING TUNNELING MICROSCOPY [J].

PASHLEY, MD ;

HABERERN, KW ;

FRIDAY, W ;

WOODALL, JM ;

KIRCHNER, PD .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2176-2179

[9]

TISCHLER MA, 1987, I PHYS C SER, V83, P135

[10]

WATANABE H, 1987, I PHYS C SER, V83, P1

← 1 →