LINEAR THERMAL-EXPANSION MEASUREMENTS ON SILICON FROM 6 TO 340 K

被引：291

作者：

LYON, KG

SALINGER, GL

SWENSON, CA

WHITE, GK

机构：

[1] IOWA STATE UNIV,AMES LAB,ENERGY RES & DEV ADM,AMES,IA 50011

[2] IOWA STATE UNIV,DEPT PHYS,AMES,IA 50011

[3] CSIRO,SYDNEY 2008,NEW S WALES,AUSTRALIA

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 03期

关键词：

D O I：

10.1063/1.323747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：865 / 868

页数：4

共 12 条

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[6]

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