SEM CL ASSESSMENT OF MINORITY-CARRIER LIFETIME IN SILICON

被引：0

作者：

MYHAJLENKO, S

DAVIDSON, SM

HAMILTON, B

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,MANCHESTER M60 1QD,LANCS,ENGLAND

[2] GEC,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1983年 / 67期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：327 / 332

页数：6

共 13 条

[1]

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[3]

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[7]

HALL RN, 1952, PHYS REV, V87, P835

[8]

HAYNES JR, 1961, INT C PHYS SEM PRAGU, P423

[9]

MYHAJLENKO S, UNPUB

[10] ENTROPY OF IONIZATION AND TEMPERATURE-VARIATION OF IONIZATION LEVELS OF DEFECTS IN SEMICONDUCTORS [J].

VANVECHTEN, JA ;

THURMOND, CD .

PHYSICAL REVIEW B, 1976, 14 (08) :3539-3550

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