Preparation and Characterization of (Au/n-SnO2/SiO2/Si/Al) MIS Device for Optoelectronic Application

被引：36

作者：

Muhsien, Marwa Abdul ^{[1
]}

Salem, Evan T. ^{[2
]}

Agool, Ibrahim R. ^{[1
]}

机构：

[1] Al Mustansiriyah Univ, Coll Sci, Dept Phys, Baghdad, Iraq

[2] Univ Technol Baghdad, Sch Appl Sci, Laser & Optoelect Branch, Baghdad, Iraq

来源：

INTERNATIONAL JOURNAL OF OPTICS | 2013年 / 2013卷

关键词：

D O I：

10.1155/2013/756402

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

SnO2 thin films were prepared by using rapid thermal oxidation (RTO) of Sn at oxidation temperature 873K and oxidation time 90 sec on semiconductor n-type and p-type silicon substrate. In order to characterize the prepared device, the electrical properties have been measured which revealed that the barrier height is greatly depended on interfacial layer thickness (SiO2). The value of peak response (n-SnO2/SiO2/n-Si) device was 0.16A/W which is greater than that of (n-SnO2/SiO2/p-Si) device whose value was 0.12A/W, while the rise time was found to be shorter.

引用

页数：9

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