THIN-FILM ELECTROLUMINESCENT DEVICE EMPLOYING TA2O5 RF SPUTTERED INSULATING FILM

被引：22
作者：
KOZAWAGUCHI, H
TSUJIYAMA, B
MURASE, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 07期
关键词：
D O I：
10.1143/JJAP.21.1028
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1028 / 1031
页数：4
相关论文
共 11 条
[1]  
INOGUCHI T, 1974, 1974 SID INT S, P84
[2]   ELECTROLUMINESCENCE OF RARE-EARTH AND TRANSITION METAL MOLECULES IN 2-6 COMPOUNDS VIA IMPACT EXCITATION [J].
KAHNG, D .
APPLIED PHYSICS LETTERS, 1968, 13 (06) :210-&
[3]  
NONAKA M, 1981, OMRON TECH, V20, P51
[4]   LOW-THRESHOLD-VOLTAGE THIN-FILM ELECTROLUMINESCENT DEVICES [J].
OKAMOTO, K ;
NASU, Y ;
HAMAKAWA, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (06) :698-702
[5]  
SAH J, 1978, APPL PHYS LETT, V33, P995
[6]  
TAKEDA M, 1980, 1980 SID INT S SAN D, P66
[7]  
TAKEDA M, 1975, J JAPAN SOC APP PH S, V44, P103
[8]  
TANAKA T, 1976, J APPL PHYS, V47, P5391
[9]  
Tannas L. E., 1981, 1981 SID International Symposium. Digest of Papers. Vol.XII, P22
[10]   REFRACTIVE-INDEX-ADJUSTABLE SIO2-TA2O5 FILMS FOR INTEGRATED OPTICAL CIRCUITS [J].
TERUI, H ;
KOBAYASHI, M .
APPLIED PHYSICS LETTERS, 1978, 32 (10) :666-668
12