ENHANCED BREAKDOWN VOLTAGES IN STRAINED INGAAS/GAAS STRUCTURES

被引：8

作者：

DAVID, JPR

MORLEY, MJ

WOLSTENHOLME, AR

GREY, R

PATE, MA

HILL, G

REES, GJ

ROBSON, PN

机构：

[1] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 17期

关键词：

D O I：

10.1063/1.108354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The breakdown voltage (V(BD)) in a semiconductor is usually proportional to its band-gap (E(g)) through the dependence of the impact ionization process on the threshold voltage (E(th)). It has recently been suggested that strain can cause E(th) to increase even when E(g) decreases, raising the possibility of narrow band-pp materials with large V(BD). By growing a range of strained InGaAs/GaAs multiple quantum well (MQW) pin diode structures and measuring V(BD), we show that the presence of strained InGaAs increases V(BD) confirming that it has a larger E(th) than GaAs.

引用

页码：2042 / 2044

页数：3

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