EXISTENCE OF DEEP ACCEPTORS IN GA-IMPLANTED AND B-IMPLANTED GAAS AFTER CLOSE-CONTACT ANNEALING

被引：33
作者：
DANSAS, P
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 06期
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D O I：
10.1063/1.335963
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：2212 / 2216
页数：5
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