GROWTH OF AL0.3GA0.7AS BY MOLECULAR-BEAM EPITAXY IN THE FORBIDDEN TEMPERATURE-RANGE USING AS-2

被引：33
作者：
ERICKSON, LP
MATTORD, TJ
PALMBERG, PW
FISCHER, R
MORKOC, H
机构：
[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
ELECTRONICS LETTERS | 1983年 / 19卷 / 16期
关键词：
D O I：
10.1049/el:19830431
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：632 / 633
页数：2
相关论文
共 6 条
[1]   MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES [J].
DRUMMOND, TJ ;
MORKOC, H ;
CHO, AY .
JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :449-454
[2]   INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES [J].
FISCHER, R ;
KLEM, J ;
DRUMMOND, TJ ;
THORNE, RE ;
KOPP, W ;
MORKOC, H ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2508-2510
[3]  
KRUSOR BS, J VAC SCI TECHNOL
[4]  
KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927
[5]   INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE MORPHOLOGY OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
MORKOC, H ;
DRUMMOND, TJ ;
KOPP, W ;
FISCHER, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) :824-826
[6]   CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY [J].
NEAVE, JH ;
BLOOD, P ;
JOYCE, BA .
APPLIED PHYSICS LETTERS, 1980, 36 (04) :311-312
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