GA(AS,P) STRAINED-LAYER SUPER-LATTICES - A TERNARY SEMICONDUCTOR WITH INDEPENDENTLY ADJUSTABLE BAND-GAP AND LATTICE-CONSTANT

被引：32
作者：
GOURLEY, PL
BIEFELD, RM
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期
关键词：
D O I：
10.1116/1.582562
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：383 / 386
页数：4
相关论文
共 15 条
[11]   ELECTRONIC-STRUCTURE OF GAASXP1-X/GAP STRAINED-LAYER SUPER-LATTICES WITH X-LESS-THAN-0.5 [J].
OSBOURN, GC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :469-472
[12]   A GAASXP1-X-GAP STRAINED-LAYER SUPER-LATTICE [J].
OSBOURN, GC ;
BIEFELD, RM ;
GOURLEY, PL .
APPLIED PHYSICS LETTERS, 1982, 41 (02) :172-174
[13]   STRAINED-LAYER SUPER-LATTICES FROM LATTICE MISMATCHED MATERIALS [J].
OSBOURN, GC .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1586-1589
[14]  
OSBOURN GC, UNPUB PHYS REV B
[15]   X-RAY DIFFRACTION FROM ONE-DIMENSIONAL SUPERLATTICES IN GAAS1-XPX CRYSTALS [J].
SEGMULLER, A ;
BLAKESLEE, AE .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1973, 6 (FEB1) :19-25
12