GA(AS,P) STRAINED-LAYER SUPER-LATTICES - A TERNARY SEMICONDUCTOR WITH INDEPENDENTLY ADJUSTABLE BAND-GAP AND LATTICE-CONSTANT

被引：32
作者：
GOURLEY, PL
BIEFELD, RM
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期
关键词：
D O I：
10.1116/1.582562
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：383 / 386
页数：4
相关论文
共 15 条
[1]   THE PREPARATION OF DEVICE QUALITY GALLIUM-PHOSPHIDE BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].
BIEFELD, RM .
JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :382-388
[2]  
BIEFELD RM, UNPUB 1982 P EL MAT
[3]   PHOTOCURRENT SPECTROSCOPY OF A STRAINED-LAYER SUPER-LATTICE [J].
FRITZ, IJ ;
BIEFELD, RM ;
OSBOURN, GC .
SOLID STATE COMMUNICATIONS, 1983, 45 (04) :323-325
[4]   GROWTH AND PHOTO-LUMINESCENCE CHARACTERIZATION OF A GAASXP1-X/GAP STRAINED-LAYER SUPER-LATTICE [J].
GOURLEY, PL ;
BIEFELD, RM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :473-475
[5]  
GOURLEY PL, 1983, 10TH P INT S GAAS RE, P249
[6]  
MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/S0022-0248(74)80055-2
[7]   ALMOST PERFECT EPITAXIAL MULTILAYERS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :989-991
[8]   DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1975, 29 (03) :273-280
[9]   DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) :265-273
[10]  
Milnes AG, 1972, HETEROJUNCTIONS META
12