Semiconducting properties of aluminum-doped ZnO thin films grown by spray pyrolysis technique

被引：28

作者：

Mahadik, M. A. ^{[1
]}

Hunge, Y. M. ^{[1
]}

Shinde, S. S. ^{[1
]}

Rajpure, K. Y. ^{[1
]}

Bhosale, C. H. ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Electrochem Mat Lab, Kolhapur 416004, Maharashtra, India

来源：

JOURNAL OF SEMICONDUCTORS | 2015年 / 36卷 / 03期

关键词：

aluminum; zinc oxide; structural; morphological and dielectrical properties;

D O I：

10.1088/1674-4926/36/3/033002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Highly transparent and preferential c-axis oriented nanocrystalline undoped and Al doped zinc oxide (AZO) thin films have been deposited onto amorphous glass substrate by spray pyrolysis. The XRD studies reveal that AZO with a hexagonal (wurtzite) crystal structure having (002) preferred orientation is formed. The atomic force microscope (AFM) shows uniform surface topography. The optical band gap values of undoped and AZO thin films were changed from 3.34 to 3.35 eV. The band gap energy and photoluminescence are found to depend on the Al doping. Thermoelectric power measurement shows film having n-type in nature. Dielectric constant and loss (tan delta)were found to be frequency dependent. Interparticle interactions in the deposited films are studied by complex impendence spectroscopy.

引用

页数：6

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