Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

被引：2

作者：

Chen Wanjun ^{[1
]}

Zhang Jing ^{[1
]}

Zhang Bo ^{[1
]}

Chen Kevin Jing ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 02期

基金：

中国国家自然科学基金; 高等学校博士学科点专项科研基金;

关键词：

fluorine-plasma surface treatment; AlGaN/GaN HEMTs; leakage current;

D O I：

10.1088/1674-4926/34/2/024003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The gate forward leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal-semiconductor barrier. Consequently, the gate forward leakage current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied.

引用

页数：4

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