NEGATIVE-U PROPERTIES FOR INTERSTITIAL BORON IN SILICON

被引：70

作者：

HARRIS, RD

NEWTON, JL

WATKINS, GD

机构：

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 48卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.48.1271

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1271 / 1274

页数：4

共 15 条

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].

ANDERSON, PW .

PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955

[2] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1979, 43 (13) :956-959

[3] THEORY OF POOLE-FRENKEL CONDUCTION IN LOW-MOBILITY SEMICONDUCTORS [J].

CONNELL, GAN ;

CAMPHAUSEN, DL ;

PAUL, W .

PHILOSOPHICAL MAGAZINE, 1972, 26 (03) :541-+

[4]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[5]

Frenkel J., 1938, TECH PHYS USSR, V5, P685

[6] 3-DIMENSIONAL POOLE-FRENKEL EFFECT [J].

HARTKE, JL .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4871-&

[7] ELECTRON CORRELATIONS IN NARROW ENERGY BANDS [J].

HUBBARD, J .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1963, 276 (1364) :238-+

[8] DEEP LEVEL TRANSIENT SPECTROSCOPY STUDIES OF TRAPPING PARAMETERS FOR CENTERS IN INDIUM-DOPED SILICON [J].

JONES, CE ;

JOHNSON, GE .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5159-5163

[9]

Jonscher A. K., 1967, THIN SOLID FILMS, V1, P213

[10] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M ;

ADLER, D ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507

← 1 2 →