SELENIUM-DX CENTER-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：2

作者：

BASMAJI, P

机构：

[1] Departamento de Física e Ciência Dos Materiais, Instituto de Física e Química de São Carlos, Universidade de São Paulo, 13560-Sao Carlos-Sao Paulo

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 05期

关键词：

D O I：

10.1063/1.349350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical transport properties of epitaxial Se-Al0.1Ga0.9As grown by molecular beam epitaxy were studied. The carrier concentration was deduced from the Shubnikov-de Haas oscillations. At low temperature, persistent photoconductivity was not observed.

引用

页码：2866 / 2867

页数：2

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