GRAIN-BOUNDARY RESISTANCE IN P-TYPE AND N-TYPE INDIUM-PHOSPHIDE

被引:2
作者
SHIEH, CL
WAGNER, S
KAZMERSKI, LL
机构
[1] PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401
关键词
D O I
10.1016/0167-577X(85)90130-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:415 / 418
页数:4
相关论文
共 9 条
[1]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[2]  
CHU SS, 1982, 16TH P IEEE PHOT SPE, P1149
[3]  
Chu T. L., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P661
[4]  
LEAMY HJ, 1982, MATERIALS RES SOC S, V5
[5]  
LEUNG D, 1984, 17TH P IEEE PHOT SPE, P264
[6]   ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON [J].
SEAGER, CH ;
CASTNER, TG .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3879-3889
[7]   INP-CDS SOLAR-CELLS [J].
SHAY, JL ;
WAGNER, S ;
BETTINI, M ;
BACHMANN, KJ ;
BUEHLER, E .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :483-486
[8]   PARA-INP-NORMAL-CDS SOLAR CELLS AND PHOTOVOLTAIC DETECTORS [J].
WAGNER, S ;
SHAY, JL ;
BACHMANN, KJ ;
BUEHLER, E .
APPLIED PHYSICS LETTERS, 1975, 26 (05) :229-230
[9]   SURFACE-DEFECTS ON SEMICONDUCTORS [J].
WILLIAMS, RH .
SURFACE SCIENCE, 1983, 132 (1-3) :122-142