BARRIER-CONTROLLED THERMALIZATION IN IN0.53GA0.47AS/INP QUANTUM WELLS

被引：4

作者：

CEBULLA, U

FORCHEL, A

BACHER, G

GRUTZMACHER, D

TSANG, WT

RAZEGHI, M

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,D-5100 AACHEN 1,FED REP GER

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

[3] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.40.10009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10009 / 10012

页数：4

共 13 条

[1] EXCITONIC LIFETIMES IN THIN INXGA1-XAS/INP QUANTUM WELLS [J].

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[2] ELECTRON-CAPTURE PROCESSES IN OPTICALLY-EXCITED IN0.53GA0.47AS/INP QUANTUM WELLS [J].

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[7]

PRICE PJ, 1985, SUPERLATTICE MICROST, V3, P255

[8] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

HIRTZ, JP ;

ZIEMELIS, UO ;

DELALANDE, C ;

ETIENNE, B ;

VOOS, M .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :585-587

[9] ENERGY-LOSS RATES FOR HOT-ELECTRONS AND HOLES IN GAAS QUANTUM WELLS [J].

SHAH, J ;

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[10] HOT CARRIERS IN QUASI-2-D POLAR SEMICONDUCTORS [J].

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