PRESSURE-INDUCED SEMICONDUCTOR-METAL TRANSITIONS IN AMORPHOUS INSB

被引：32
|
作者：
SHIMOMURA, O [1 ]
ASAUMI, K [1 ]
SAKAI, N [1 ]
MINOMURA, S [1 ]
机构：
[1] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 113,JAPAN
来源：
PHILOSOPHICAL MAGAZINE | 1976年 / 34卷 / 05期
关键词：
D O I：
10.1080/14786437608222054
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：839 / 849
页数：11
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