HIGH-GAIN AL0.48IN0.52AS/GA0.53AS VERTICAL N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY

被引：48
作者：
MALIK, RJ
HAYES, JR
CAPASSO, F
ALAVI, K
CHO, AY
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 10期
关键词：
D O I：
10.1109/EDL.1983.25772
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：383 / 385
页数：3
相关论文
共 21 条
[1]   OPTICALLY PUMPED 1.55-MU-M DOUBLE HETEROSTRUCTURE GAXALYIN1-X-YAS/ALUIN1-UAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
ALAVI, K ;
TEMKIN, H ;
WAGNER, WR ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1983, 42 (03) :254-256
[2]   GAAIAS-GAAS BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTOR [J].
ANKRI, D ;
EASTMAN, LF .
ELECTRONICS LETTERS, 1982, 18 (17) :750-751
[3]  
Ankri D., 1982, International Electron Devices Meeting. Technical Digest
[4]  
ASBECK PM, 1982, IEEE ELECTRON DEVICE, V3, P366
[5]   PREPARATION AND PROPERTIES OF MOLECULAR-BEAM EPITAXY GROWN (AL0.5GA0.5)0.48IN0.52AS [J].
BARNARD, JA ;
WOOD, CEC ;
EASTMAN, LF .
ELECTRON DEVICE LETTERS, 1982, 3 (10) :318-319
[6]  
CAMPBELL JC, 1981, IEEE J QUANTUM ELECT, V17, P264, DOI 10.1109/JQE.1981.1071072
[7]   STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J].
CAPASSO, F ;
TSANG, WT ;
WILLIAMS, GF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :381-390
[8]   NEW GRADED BAND-GAP PICOSECOND PHOTO-TRANSISTOR [J].
CAPASSO, F ;
TSANG, WT ;
BETHEA, CG ;
HUTCHINSON, AL ;
LEVINE, BF .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :93-95
[9]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM GA0.47IN0.53AS WITH A ROTATING SAMPLE HOLDER [J].
CHENG, KY ;
CHO, AY ;
WAGNER, WR .
APPLIED PHYSICS LETTERS, 1981, 39 (08) :607-609
[10]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J].
CHENG, KY ;
CHO, AY ;
WAGNER, WR ;
BONNER, WA .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1015-1021
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