COMPOSITION-RATIO DEPENDENCE OF FORMATION OF BOUND-STATES IN NITROGEN-IMPLANTED ALXGA1-XAS

被引：24

作者：

MAKITA, Y ^{[1
]}

LJUIN, H ^{[1
]}

GONDA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB,TANASHI,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 05期

关键词：

D O I：

10.1063/1.88738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：287 / 289

页数：3

共 9 条

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[3] NEW LUMINESCENCE LINE DUE TO NITROGEN IMPLANTED INTO ALXGA1-XAS(X=0.37) [J].

GONDA, S ;

MAKITA, Y .

APPLIED PHYSICS LETTERS, 1975, 27 (07) :392-394

[4] PHOTOLUMINESCENCE OF INDIRECT-BAND-GAP GAAS1-XPX(X=0.52)IMPLANT WITH NITROGEN IONS [J].

GONDA, S ;

MAKITA, Y ;

MAEKAWA, S ;

TANOUE, H ;

TSURUSHI.T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (09) :1483-1484

[5] LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS [J].

HEIM, U ;

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PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (02) :461-470

[6] HOT IMPLANTATION OF NITROGEN IONS INTO GAAS1-XPX (X = 0.36) [J].

MAKITA, Y ;

GONDA, S ;

TANOUE, H ;

TSURUSHIMA, T ;

MAEKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (03) :563-564

[7] ENHANCEMENT OF EMISSION INTENSITY IN INDIRECT-GAP ALXGA1-XAS (X=0.53) BY NITROGEN-ION IMPLANTATION [J].

MAKITA, Y ;

GONDA, SI ;

IJUIN, H ;

TSURUSHIMA, T ;

TANOUE, H ;

MAEKAWA, S .

APPLIED PHYSICS LETTERS, 1976, 28 (02) :103-105

[8]

MAKITA Y, 1975, APPL PHYS LETT, V27, P332

[9]

ONTON A, 1971, B AM PHYS SOC, V16, P371

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