AL-SIO2-AL SANDWICH MICROSTRIP LINES FOR HIGH-FREQUENCY ON-CHIP INTERCONNECTS

被引：2

作者：

GONDERMANN, J

VONKAMIENSKI, EGS

ROSKOS, HG

KURZ, H

机构：

[1] Institut für Halbleitertechnik, RWTH (Rheinisch-Westfalische Technische Hochschule) Aachen, D-52056, Aachen.

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1993年 / 41卷 / 12期

关键词：

D O I：

10.1109/22.260691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present details on the high-frequency behavior of a downscaled 2 mum wide microstrip line, fabricated with both signal and ground conductors on top of the substrate. A significantly reduced geometric dispersion for electric pulses with a bandwidth of several hundred gigahertz is found in time-resolved electrooptic sampling measurements. Additionally, the strong confinement of the electric field within these surface-mounted microstrip lines promises low substrate losses, even on doped substrates, and reduced crosstalk.

引用

页码：2087 / 2091

页数：5

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