CURRENT-MODE MULTIVALUED DYNAMIC MOS MEMORY WITH ERROR CORRECTION

被引：4

作者：

LEE, EKF

GULAK, PG

机构：

[1] VLSI Research Group, Department of Electrical Engineering, University of Toronto

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 11期

关键词：

MEMORIES; INTEGRATED CIRCUITS; ANALOG COMPUTERS;

D O I：

10.1049/el:19920676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A dynamic current-mode multiple valued memory is proposed, which is based on current copier and single slope A/D techniques. An error correction technique can also be used to increase noise margins of the stored values by storing and comparing the LSBs of the binary representation during each refresh cycle.

引用

页码：1067 / 1069

页数：3

共 6 条

[1]

CURRENT KW, 1991, MAY P INT S MULT VAL, P196

[2] AN EXPERIMENTAL LARGE-CAPACITY SEMICONDUCTOR FILE MEMORY USING 16-LEVELS CELL STORAGE [J].